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2SD999 NPN Transistors(BJT) Vcbo=30V Vceo=25v Ic= 1A ft=130MHz HFE= 135~270 Vce=210mV/0.21VSOT-89 marking CL
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) |
30V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) |
25V |
| 集电极连续输出电流IC Collector Current(IC) |
1A |
| 截止频率fT Transtion Frequency(fT) |
130MHz |
| 直流电流增益hFE DC Current Gain(hFE) |
135~270 |
| 管压降VCE（sat） Collector-Emitter Saturation Voltage |
210mV/0.21V |
| 耗散功率Pc Power Dissipation |
2W |
| Description & Applications | NPN Silicon epitaxial transistor power Mini Mold low collector saturation voltage ：Vce<0.4v excellent DC current gain linearity ：hFE =140 complement to PNP type 2SB798 |
| 描述与应用 | NPN硅外延晶体管电源小型模具 低集电极饱和电压VCE<0.4V 优良的直流电流增益线性度：HFE= 140 补充PNP型2SB798 |
