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2SJ355 MOSFET P-Channel -30V 2A 0.26ohm SOT-89 marking PQ high-speed switch

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Product description
最大源漏极电压Vds
Drain-Source Voltage
-30V
最大栅源极电压Vgs(±)
Gate-Source Voltage
-20V
最大漏极电流Id
Drain Current
-2A
源漏极导通电阻Rds
Drain-Source On-State
Resistance
0.26Ω @-1A,-10V
开启电压Vgs(th)
Gate-Source Threshold Voltage
-1.0--2.0V
耗散功率Pd
Power Dissipation
20W
Description & ApplicationsFEATURES • Can be directly driven by 5-V IC • Low ON resistance RDS(on) = 0.60 Ω MAX. @VGS = –4 V, ID = –1.0 A RDS(on) = 0.35 Ω MAX. @VGS = –10 V, ID = –1.0 A
描述与应用•可直接驱动5-V IC •低导通电阻 RDS(ON)= 0.60Ω最大。 @ VGS=-4 V,ID= -1.0à RDS(ON)= 0.35Ω最大。 @ VGS=-10V,ID=-1.0 A
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