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3SK233 MOSFET N-Channel 12V 30mA SOT-143/MPAK-4 marking XW low voltage operating/Superior cross modulation performance
| 最大源漏极电压Vds Drain-Source Voltage | 12V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 10V |
| 最大漏极电流Id Drain Current | 30mA |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | -0.7-0.7/0.1-0.8V |
| 耗散功率Pd Power Dissipation | 150mW/0.15W |
| Description & Applications | Silicon N Channel Dual Gate MOS FET UHF TV Tuner RF Amplifier • Low voltage operation. • Superior cross modulation characteristics. |
| 描述与应用 | 硅N沟道双栅MOS FET UHF电视调谐器射频放大器 •低电压操作。 •高级交叉调制特性 |
