Scavenging browsing Mobile
Hot Search： SSM3K35MFV SSM3J36MFV 2SK3376TT-B
APM2313AC-TR MOSFET P-Channel -20V -1.8A 0.108ohm SOT-23 marking M138 battery-powered equipment notebook battery management
| 最大源漏极电压Vds Drain-Source Voltage | -20V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 10V |
| 最大漏极电流Id Drain Current | -1.8A |
| 源漏极导通电阻Rds Drain-Source On-State Resistance | 0.108Ω @-1.8A,-4.5V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | -0.5--1V |
| 耗散功率Pd Power Dissipation | 1.259W |
| Description & Applications | M293/-1.8A , RDS(ON)=108mΩ(typ.) @ VGS=-4.5V RDS(ON)=135mΩ(typ.) @ VGS=-2.5V Super High Dense Cell Design for Extremely Low RDS(ON) Reliable and Rugged SOT-23 Package |
| 描述与应用 | H293/-1.8A， RDS（ON）=108mΩ（典型值）@ VGS=-4.5V RDS（ON）=135mΩ（典型值）@ VGS=-2.5V 超级高密度电池设计极 低RDS（ON） 可靠耐用 SOT-23封装 |
