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BF999 MOSFET N-Channel 20V SOT-23/SC-59 marking LB low noise gain control amplifier

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Product description
最大源漏极电压Vds Drain-Source Voltage20V
最大栅源极电压Vgs(±) Gate-Source Voltage30v
最大漏极电流Id Drain Current
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance
开启电压Vgs(th) Gate-Source Threshold Voltage2.5V
耗散功率Pd Power Dissipation200mW/0.2W
Description & ApplicationsSilicon N-Channel MOSFET Triode For high-frequency stages up to 300 MHz preferably in FM applications
描述与应用硅N沟道MOSFET三极管 对于高达300 MHz的高频阶段 最好是在FM应用
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