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BFQ67W NPN Transistors(BJT) 20V 50mA 7.5Ghz 65~150 400mV/0.4V SOT-323/SC-70 marking WV2 low noisesmall signal amplifier
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 20V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 12V |
| 集电极连续输出电流IC Collector Current(IC) | 50mA |
| 截止频率fT Transtion Frequency(fT) | 7.5Ghz |
| 直流电流增益hFE DC Current Gain(hFE) | 65~150 |
| 管压降VCE（sat） Collector-Emitter Saturation Voltage | 400mV/0.4V |
| 耗散功率Pc Power Dissipation | 200mW/0.2W |
| Description & Applications | NPN Silicon Planar RF Transistor Features • Small feedback capacitance • Low noise figure • High transition frequency • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Applications Low noise small signal amplifiers up to 2 GHz. This transistor has superior noise figure and associated gain performance at UHF, VHF and microwave frequencies. |
| 描述与应用 | NPN硅平面RF晶体管 特点 •小反馈电容 •低噪声系数 •高转换频率 • 无铅（Pb）组件 •组件按照RoHS 2002/95/EC和WEEE2002/96/EC 应用 低噪声小信号放大器高达2 GHz。这晶体管能在UHF，VHF和微波频率具有优越的噪声系数和相关增益性。 |
