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BSS84 MOSFET P-Channel -60V -130mA 1.2ohm SOT-23 marking SP small signal switch high saturation current

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Product description
最大源漏极电压Vds
Drain-Source Voltage		-60V
最大栅源极电压Vgs(±)
Gate-Source Voltage		20V
最大漏极电流Id
Drain Current		-0.13A
源漏极导通电阻Rds
Drain-Source On-State
Resistance		1.2Ω @-100mA,-5V
开启电压Vgs（th）
Gate-Source Threshold Voltage		-0.8--2.V
耗散功率Pd
Power Dissipation		360mW/0.36W
Description & ApplicationsFeatures • −0.13A, −50V. RDS(ON) = 10Ω @ VGS = −5 V • Voltage controlled p-channel small signal switch • High density cell design for low RDS(ON) • High saturation current
描述与应用•0.13A，-50V。 RDS（ON）=10Ω@ VGS=-5 V •电压控制p沟道小信号开关 •高密度电池设计的低RDS（ON） •高饱和电流
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