Scavenging browsing Mobile
Hot Search： SSM3K35MFV SSM3J36MFV 2SK3376TT-B
ECH8302-TL-E MOSFET P-Channel -30V -7A 48mohm Vth:-1~-2.4V ECH8 marking JB low on-resistance general switch 4V drive
| 最大源漏极电压Vds Drain-Source Voltage | -30V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 20V |
| 最大漏极电流Id Drain Current | -7A |
| 源漏极导通电阻Rds Drain-Source On-State Resistance | 48mΩ@ VGS = -4V, ID = -2A |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | -1~-2.4V |
| 耗散功率Pd Power Dissipation | 1.6W |
| Description & Applications | P-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • Low ON-resistance. • 4V drive. |
| 描述与应用 | P-沟道硅MOSFET 通用开关设备应用 特点 •低导通电阻。 •4V驱动器。 |
