ECH8302-TL-E MOSFET P-Channel -30V -7A 48mohm Vth:-1~-2.4V ECH8 marking JB low on-resistance general switch 4V drive|Welcome to Eric Online Store - Shenzhen ERIC Electronics Co., Ltd.

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ECH8302-TL-E MOSFET P-Channel -30V -7A 48mohm Vth:-1~-2.4V ECH8 marking JB low on-resistance general switch 4V drive

Model：ECH8302-TL-E
Mark / screen / code / typing：JB
Manufacturer：
Date Code：05+ROHS
Package：ECH8
Standard Package：8000
Min Order：100

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Product description

最大源漏极电压Vds Drain-Source Voltage	-30V
最大栅源极电压Vgs(±) Gate-Source Voltage	20V
最大漏极电流Id Drain Current	-7A
源漏极导通电阻Rds Drain-Source On-State Resistance	48mΩ@ VGS = -4V, ID = -2A
开启电压Vgs（th） Gate-Source Threshold Voltage	-1~-2.4V
耗散功率Pd Power Dissipation	1.6W
Description & Applications	P-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • Low ON-resistance. • 4V drive.
描述与应用	P-沟道硅MOSFET 通用开关设备应用特点 •低导通电阻。 •4V驱动器。

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