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EMG9 NPN+NPN Complex Bipolar Digital Transistor 50V 0.1A 0.15W SOT-563/EMT6 marking G9 switching inverting interface driver circuit
| Collector-Base Voltage(VCBO) Q1/Q2 | 50V/50V |
| Collector-Emitter Voltage(VCEO)Q1/Q2 | 50V/50V |
| Collector Current(IC) Q1/Q2 | 10MA/100MA |
| Q1 Input Resistance(R1) | 10KΩ/Ohm |
| Q1Base-Emitter Resistance(R2) | 10KΩ/Ohm |
| Q1(R1/R2) Q1 Resistance Ratio | 1 |
| Q2 Input Resistance(R1) | 10KΩ/Ohm |
| Q2 Base-Emitter Resistance(R2) | 10KΩ/Ohm |
| Q2(R1/R2) Q2 Resistance Ratio | 1 |
| DC Current Gain(hFE) Q1/Q2 | |
| Transtion Frequency(fT) Q1/Q2 | 250MHz/250MHZ |
| Power Dissipation Q1/Q2 | 150mW/0.15W |
| Description & Applications | Features •Emitter common (dual digital transistors) •Two DTC114E chips in a EMT or UMT or SMT package. •Mounting cost and area can be cut in half |
| 描述与应用 | Features •Emitter common (dual digital transistors) •Two DTC114E chips in a EMT or UMT or SMT package. •Mounting cost and area can be cut in half |
