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EMG6 NPN+NPN Complex Bipolar Digital Transistor 50V 100mA HEF=100~600 R1=47KΩ 150mW/0.15W SOT-553/EMT5 marking G6 switching inverting interface driver circuit
| Collector-Base Voltage(VCBO) Q1/Q2 | 50V/50V |
| Collector-Emitter Voltage(VCEO) Q1/Q2 | 50V/50V |
| Collector Current(IC) Q1/Q2 | 100mA/100MA |
| Q1 Input Resistance(R1) | 47KΩ/Ohm |
| Q1 Base-Emitter Resistance(R2) | |
| Q1(R1/R2) Q1 Resistance Ratio | |
| Q2 Input Resistance(R1) | 47KΩ/Ohm |
| Q2 Base-Emitter Resistance(R2) | |
| Q2(R1/R2) Q2 Resistance Ratio | |
| DC Current Gain(hFE) Q1/Q2 | 100~600/100~600 |
| Transtion Frequency(fT) | 250MHz/250MHZ |
| Power Dissipation Q1/Q2 | 150mW/0.15W |
| Description & Applications | Features •Emitter common (dual digital transistors) •Two DTC114T chips in a EMT or UMT or SMT package. |
| 描述与应用 | 特点 •发射极普通的（双数字晶体管） •两个DTC114T的在EMT或UMT或SMT封装的芯片 |
