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FDN336P MOSFET P-Channel -20V -1.3A 0.12ohm SOT-23 marking 336
| 最大源漏极电压Vds Drain-Source Voltage | -20V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | ±8V |
| 最大漏极电流Id Drain Current | -1.3A |
| 源漏极导通电阻Rds Drain-Source On-State Resistance | 0.12Ω @-1.3A,-4.5V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | -0.4~1.5V |
| 耗散功率Pd Power Dissipation | 500mW/0.5W |
| Description & Applications | Single P-Channel 2.5V Specified Power Trench MOSFET . * -1.3 A, -20 V. RDS(ON)= 0.20 W @ VGS = -4.5 V RDS(ON) = 0.27 W @ VGS= -2.5 V. * Low gate charge (3.6 nC typical). * High performance trench technology for extremely low RDS(ON).. |
| 描述与应用 | 单P沟道2.5V额定功率沟槽MOSFET。 *-1.3 A，-20 V. RDS（ON）= 0.20 W @ VGS=-4.5 V RDS（ON）=0.27 W@ VGS= -2.5 V。 *低栅极电荷（3.6 nC典型）。 *高性能沟道技术极低的RDS（ON） |
