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FDV301N MOSFET N-Channel 25V 220mA/0.22A SOT-23/SC-59 marking 301
| 最大源漏极电压Vds Drain-Source Voltage | 25V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 8V |
| 最大漏极电流Id Drain Current | 220mA/0.22A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 3.1Ω/Ohm @400mA,4.5V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 1.2V |
| 耗散功率Pd Power Dissipation | 350mW/0.35W |
| Description & Applications | Very low level gate drive requirements allowing direct operation in 3V circuits. VGS(th) < 1.5V. Gate-Source Zener for ESD ruggedness. >6kV Human Body Model Replace multiple NPN digital transistors with one DMOS FET |
| 描述与应用 | 非常低的水平栅极驱动要求可直接 操作在3V电路。 VGS（TH<1.5。 门源齐纳ESD坚固。 >6kV人体模型 更换多个NPN数字晶体管与一DMOS FET |
