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FZT649TA NPN Transistors(BJT) 35V 3A 150MHz 100~300 600mV/0.6V SOT-223 marking FZT649 high current gain
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 35V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 25V |
| 集电极连续输出电流IC Collector Current(IC) | 3A |
| 截止频率fT Transtion Frequency(fT) | 150MHz |
| 直流电流增益hFE DC Current Gain(hFE) | 100~300 |
| 管压降VCE（sat） Collector-Emitter Saturation Voltage | 600mV/0.6V |
| 耗散功率Pc Power Dissipation | 2W |
| Description & Applications | NPN Low Saturation Transistor high current gain |
| 描述与应用 | NPN低饱和晶体管 高电流增益 |
