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HAT1111C MOSFET P-Channel -60V -2A 0.245ohm SOT-363 marking UA low drive current 1.8V drive
| 最大源漏极电压Vds Drain-Source Voltage | -60V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | -20V |
| 最大漏极电流Id Drain Current | -2A |
| 源漏极导通电阻Rds Drain-Source On-State Resistance | 0.245Ω @-1A,-10V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | -1--2V |
| 耗散功率Pd Power Dissipation | 1.25W |
| Description & Applications | • Low on-resistance RDS(on) = 41 mΩ typ. (at VGS = –4.5 V) • Low drive current. • 1.8 V gate drive devices. • High density mounting |
| 描述与应用 | •低导通电阻 RDS（ON） = 41MΩ（典型值）。 （VGS=-4.5 V） •低驱动电流。 •1.8 V门驱动装置。 •高密度安装 |
