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HAT1111C MOSFET P-Channel -60V -2A 0.245ohm SOT-363 marking UA low drive current 1.8V drive

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Product description
最大源漏极电压Vds
Drain-Source Voltage		-60V
最大栅源极电压Vgs(±)
Gate-Source Voltage		-20V
最大漏极电流Id
Drain Current		-2A
源漏极导通电阻Rds
Drain-Source On-State
Resistance		0.245Ω @-1A,-10V
开启电压Vgs（th）
Gate-Source Threshold Voltage		-1--2V
耗散功率Pd
Power Dissipation		1.25W
Description & Applications• Low on-resistance RDS(on) = 41 mΩ typ. (at VGS = –4.5 V) • Low drive current. • 1.8 V gate drive devices. • High density mounting
描述与应用•低导通电阻 RDS（ON） = 41MΩ（典型值）。 （VGS=-4.5 V） •低驱动电流。 •1.8 V门驱动装置。 •高密度安装
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