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HMBT1015-G PNP transistors（BJT） -50V -150mA/-0.15A 80MHz 200~400 -300mV/-0.3V SOT-23/SC-59 marking A4G AFamplifier/general amplifier
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | -50V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | −50V |
| 集电极连续输出电流IC Collector Current(IC) | −150mA/-0.15A |
| 截止频率fT Transtion Frequency(fT) | 80MHz |
| 直流电流增益hFE DC Current Gain(hFE) | 200~400 |
| 管压降VCE（sat） Collector-Emitter SaturationVoltage | -300mV/-0.3V |
| 耗散功率Pc PoWer Dissipation | 225mW/0.225W |
| Description & Applications | PNP epitaxial planar transistor Description The HMBT1015 is designed for use in driver stage of AF amplifier and general purpose amplification. |
| 描述与应用 | PNP外延平面晶体管 描述 HMBT1015被设计用于在驱动级的AF放大器和通用放大。 |
