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IRLL014NTR MOSFET N-Channel 2.8A SOT-223/SC-73/TO261-4 marking LL04N low gate chargefast switch
| 最大源漏极电压Vds Drain-Source Voltage | |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 16V |
| 最大漏极电流Id Drain Current | 2.8A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 0.14Ω/Ohm @20A,10V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 1.0-2.0V |
| 耗散功率Pd Power Dissipation | 2.1W |
| Description & Applications | HEXFET® Power MOSFET Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The SOT-223 package is designed for surface-mount using vapor phase, infra red, or wave soldering techniques. Its unique package design allows for easy automatic pickand-place as with other SOT or SOIC packages but has the added advantage of improved thermal performance due to an enlarged tab for heatsinking. Power dissipation of 1.0W is possible in a typical surface mount application. Surface Mount Advanced Process Technology Ultra Low On-Resistance ynamic dv/dt Rating Fast Switching Fully Avalanche Rated |
| 描述与应用 | HEXFET®功率MOSFET 描述 第五代HEXFETs国际整流器 利用先进的加工技术，以实现 极低的导通电阻每硅片面积。这样做的好处， 结合快速开关速度和坚固耐用 设备的设计，HEXFET功率MOSFET 见长，为设计师提供了一个非常有效的 和可靠的装置，用于在各种各样的应用中。 SOT-223封装是专为表面贴装 使用气相，红外线，或波峰焊技术。 其独特的包装设计允许与其他SOT或SOIC封装，便于自动pickand场所，但有额外的优势，改善热性能 由于散热放大“选项卡。功耗 1.0W有可能在一个典型的表面贴装应用。 表面贴装 先进的工艺技术 超低导通电阻 动态dv/ dt额定值 快速切换 |
