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KST5089 NPN Transistors(BJT) 30V 50mA 50MHz 450~1200 500mV/0.5V SOT-23/SC-59 marking 1R
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 30V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 30V |
| 集电极连续输出电流IC Collector Current(IC) | 50mA |
| 截止频率fT Transtion Frequency(fT) | 50MHz |
| 直流电流增益hFE DC Current Gain(hFE) | 450~1200 |
| 管压降VCE（sat） Collector-Emitter Saturation Voltage | 500mV/0.5V |
| 耗散功率Pc Power Dissipation | 350mW/0.35W |
| Description & Applications | Low Noise Transistor NPN Epitaxial Silicon Transistor |
| 描述与应用 | 低噪声晶体管 NPN外延硅晶体管 |
