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KST5551MTF NPN Transistors(BJT) 180V 600mA/0.6a 300MHz 80~250 200mV/0.2V SOT-23/SC-59 marking G1 amplifier
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 180V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 160V |
| 集电极连续输出电流IC Collector Current(IC) | 600mA/0.6A |
| 截止频率fT Transtion Frequency(fT) | 300MHz |
| 直流电流增益hFE DC Current Gain(hFE) | 80~250 |
| 管压降VCE（sat） Collector-Emitter Saturation Voltage | 200mV/0.2V |
| 耗散功率Pc Power Dissipation | 350mW/0.35W |
| Description & Applications | Amplifier Transistor • Collector-Emitter Voltage: VCEO=160V • Collector Power Dissipation: PC (max)=350mW |
| 描述与应用 | 晶体管放大器 •集电极 - 发射极电压VCEO=160V •集电极耗散功率：PC（最大值）=350MW |
