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MCH6616 Complex FET 20V 1.6A SOT-363/SC70-6/MCPH6 marking FQ ultra high-speed switch 2.5V drive
| 最大源漏极电压Vds Drain-Source Voltage | 20V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 10V |
| 最大漏极电流Id Drain Current | 1.6A |
| 源漏极导通电阻Rds Drain-Source On-State Resistance | 450mΩ@ VGS =1.8V, ID =100mA |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 0.4~1.3V |
| 耗散功率Pd Power Dissipation | 800mW/0.8W |
| Description & Applications | Ultrahigh-Speed Switching Applications Features • Low ON-resistance. • Ultrahigh-speed switching. • 2.5V drive. • Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting. |
| 描述与应用 | 超高速开关应用 特点 •低导通电阻。 •超高速开关。 •2.5V驱动。 •复合型2包含在一个单一的包装，促进高密度安装MOSFET。 |
