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SMBT3904 NPN Transistors(BJT) 60V 200mA/0.2A 300MHz 100~300 300mV/0.3V SOT-23/SC-59 marking 1A switch
集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 60V |
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 40V |
集电极连续输出电流IC Collector Current(IC) | 200mA/0.2A |
截止频率fT Transtion Frequency(fT) | 300MHz |
直流电流增益hFE DC Current Gain(hFE) | 100~300 |
管压降VCE(sat) Collector-Emitter Saturation Voltage | 300mV/0.3V |
耗散功率Pc Power Dissipation | 330mW/0.33W |
Description & Applications | Features • NPN Silicon Switching Transistor • High DC current gain: 0.1mA to 100mA • Low collector-emitter saturation voltage • Complementary type: SMBT3906 (PNP) |
描述与应用 | 特点 •NPN型硅开关晶体管 •高直流电流增益:0.1mA至100mA的 •低集电极 - 发射极饱和电压 •互补型:SMBT3906(PNP) |