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SMBT3904 NPN Transistors(BJT) 60V 200mA/0.2A 300MHz 100~300 300mV/0.3V SOT-23/SC-59 marking 1A switch

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Product description
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
60V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
40V
集电极连续输出电流IC
Collector Current(IC)
200mA/0.2A
截止频率fT
Transtion Frequency(fT)
300MHz
直流电流增益hFE
DC Current Gain(hFE)
100~300
管压降VCE(sat)
Collector-Emitter Saturation Voltage
300mV/0.3V
耗散功率Pc
Power Dissipation
330mW/0.33W
Description & ApplicationsFeatures • NPN Silicon Switching Transistor • High DC current gain: 0.1mA to 100mA • Low collector-emitter saturation voltage • Complementary type: SMBT3906 (PNP)
描述与应用特点 •NPN型硅开关晶体管 •高直流电流增益:0.1mA至100mA的 •低集电极 - 发射极饱和电压 •互补型:SMBT3906(PNP)
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