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MMBT5551 NPN Transistors(BJT) 180V 600mA/0.6a 100Mhz~300Mhz 30~250 150mV~250mV SOT-23/SC-59 marking TS generalhigh voltage amplifier
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 180V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 160V |
| 集电极连续输出电流IC Collector Current(IC) | 600mA/0.6A |
| 截止频率fT Transtion Frequency(fT) | 100Mhz~300Mhz |
| 直流电流增益hFE DC Current Gain(hFE) | 30~250 |
| 管压降VCE（sat） Collector-Emitter Saturation Voltage | 150mV~250mV |
| 耗散功率Pc Power Dissipation | 350mW/0.35W |
| Description & Applications | • This device is designed for general purpose high voltage amplifiers and gas discharge display drivers. • Suffix “-C” means Center Collector in 2N5551 (1. Emitter 2. Collector 3. Base) • Suffix “-Y” means hFE 180~240 in 2N5551 (Test condition : IC = 10mA, VCE = 5.0V) |
| 描述与应用 | 这个装置是专为通用高电压放大器和气体放电显示驱动程序。 •后缀“-C”指中心集电极2N5551（1集电极发射23。基地） •后缀“-Y”表示HFE180〜2402N5551（测试条件：IC=10mA时，VCE= 5.0V） |
