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MSD1328-R NPN Transistors(BJT) 25V 500mA/0.5A 200~350 400mV/0.4V SOT-23/SC-59 marking IDR amplifier

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Product description
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
25V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
20V
集电极连续输出电流IC
Collector Current(IC)
500mA/0.5A
截止频率fT
Transtion Frequency(fT)
直流电流增益hFE
DC Current Gain(hFE)
200~350
管压降VCE(sat)
Collector-Emitter Saturation Voltage
400mV/0.4V
耗散功率Pc
Power Dissipation
200mW/0.2W
Description & ApplicationsNPN Low Voltage Output Amplifiers - Surface Mount • Pb−Free Packages are Available
描述与应用NPN低电压输出 放大器 - 表面贴装 •无铅包可用
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