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MSD1328-R NPN Transistors(BJT) 25V 500mA/0.5A 200~350 400mV/0.4V SOT-23/SC-59 marking IDR amplifier
集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 25V |
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 20V |
集电极连续输出电流IC Collector Current(IC) | 500mA/0.5A |
截止频率fT Transtion Frequency(fT) | |
直流电流增益hFE DC Current Gain(hFE) | 200~350 |
管压降VCE(sat) Collector-Emitter Saturation Voltage | 400mV/0.4V |
耗散功率Pc Power Dissipation | 200mW/0.2W |
Description & Applications | NPN Low Voltage Output Amplifiers - Surface Mount • Pb−Free Packages are Available |
描述与应用 | NPN低电压输出 放大器 - 表面贴装 •无铅包可用 |