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MT6L58AFS NPN+NPN Complex Bipolar Transistor 10V 15mA/40mA 70~140/80~160 10GHZ SOT-563/ES6 marking 15 switch and digital circuit application
| V(BR)CBO Collector-Base Voltage(VCBO) | 10V |
| V(BR)CEO Collector-Emitter Voltage(VCEO) | 5V |
|
Collector Current(IC) Q1/Q2 |
15mA/40mA |
| DC Current Gain(hFE) | 70~140/80~160 |
| Transtion Frequency(fT) | 10GHZ |
| Pc Power Dissipation | 0.1W |
| Description & Applications | Features • TOSHIBA Transistor Silicon NPN Epitaxial Planar Type • Two devices are incorporated in a fine-pitch, small-mold package (6 pins): fS6. • VHF~UHF Band Low Noise Amplifier Applications • Superior noise characteristics • Superior performance in buffer and oscillator applications. |
