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MT6L11FS NPN+NPN Complex Bipolar Transistor 13V 40mA 6GHZ HEF=100~160 SOT-563/ES6 marking YO switch and digital circuit application
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 13V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 6V |
| 集电极连续输出电流IC Collector Current(IC) | 40mA |
| 直流电流增益hFE DC Current Gain(hFE) | 100~160 |
| 截止频率fT Transtion Frequency(fT) | 6GHZ |
| 耗散功率Pc Power Dissipation | 0.1W |
| Description & Applications | Features • TOSHIBA Transistor Silicon NPN Epitaxial Planar Type • Two devices are incorporated in a fine-pitch, small-mold package (6 pins): fS6. • Superior noise characteristics • Superior performance in buffer and oscillator applications. • VHF~UHF Band Low-Noise Amplifier Applications |
