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NDS0605 MOSFET P-Channel -30V 180mA 1.0ohm SOT-23 marking 65D built-in gate protection diode 4.5V drive low on-resistance

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Product description
最大源漏极电压Vds
Drain-Source Voltage
-30V
最大栅源极电压Vgs(±)
Gate-Source Voltage
20V
最大漏极电流Id
Drain Current
-180mA/-0.18A
源漏极导通电阻Rds
Drain-Source On-State
Resistance
1.0Ω @-500mA,-10V
开启电压Vgs(th)
Gate-Source Threshold Voltage
-1--3V
耗散功率Pd
Power Dissipation
360mW/0.36W
Description & ApplicationsFEATURES • 4.5 V drive available • Low on-state resistance RDS(on)1 = 72 mΩ MAX. (VGS = −10 V, ID = −2.0 A) RDS(on)2 = 105 mΩ MAX. (VGS = −4.5 V, ID = −2.0 A) • Built-in gate protection diode
描述与应用•4.5 V可驱动 •低通态电阻 的RDS(on)1 =72mΩ最大。(VGS= -10 V,ID= -2.0ấ) 的RDS(on)=105mΩ最大。 VGS= -4.5 V,ID= -2.0) •内置栅极保护二极管
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