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NDS0605 MOSFET P-Channel -30V 180mA 1.0ohm SOT-23 marking 65D built-in gate protection diode 4.5V drive low on-resistance
| 最大源漏极电压Vds Drain-Source Voltage | -30V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 20V |
| 最大漏极电流Id Drain Current | -180mA/-0.18A |
| 源漏极导通电阻Rds Drain-Source On-State Resistance | 1.0Ω @-500mA,-10V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | -1--3V |
| 耗散功率Pd Power Dissipation | 360mW/0.36W |
| Description & Applications | FEATURES • 4.5 V drive available • Low on-state resistance RDS(on)1 = 72 mΩ MAX. (VGS = −10 V, ID = −2.0 A) RDS(on)2 = 105 mΩ MAX. (VGS = −4.5 V, ID = −2.0 A) • Built-in gate protection diode |
| 描述与应用 | •4.5 V可驱动 •低通态电阻 的RDS（on）1 =72mΩ最大。（VGS= -10 V，ID= -2.0ấ） 的RDS（on）=105mΩ最大。 VGS= -4.5 V，ID= -2.0） •内置栅极保护二极管 |
