Scavenging browsing Mobile
Hot Search： SSM3K35MFV SSM3J36MFV 2SK3376TT-B
PEMD2 NPN+PNP Complex Bipolar Digital Transistor 50V/-50V 100mA/-100mA HEF=60 R1=R2=22KΩ 300mW/0.3W SOT-563/SOT666 marking D4 switching inverting interface driver circuit
| Collector-Base Voltage(VCBO) Q1/Q2 | 50V/-50V |
| Collector-Emitter Voltage(VCEO) Q1/Q2 | 50V/-50V |
| Collector Current(IC) Q1/Q2 | 100mA/-100mA |
| Q1 Input Resistance(R1) | 22KΩ/Ohm |
| Q1Base-Emitter Resistance(R2) | 22KΩ/Ohm |
| Q1(R1/R2) Q1 Resistance Ratio | 1 |
| Q2 Input Resistance(R1) | 22KΩ/Ohm |
| Q2Base-Emitter Resistance(R2) | 22KΩ/Ohm |
| Q2(R1/R2) Q2 Resistance Ratio | 1 |
| DC Current Gain(hFE) | 60 |
| Transtion Frequency(fT) Q1/Q2 | |
| Power Dissipation Q1/Q2 | 300mW/0.3W |
| Description & Applications | Features • PNP/PNP resistor-equipped transistors; • Built-in bias resistors • Simplified circuit design • Reduction of component count • Reduced pick and place costs. APPLICATIONS • General purpose switching and amplification • Inverter and interface circuits • Circuit driver. |
| 描述与应用 | 特点 •PNP / PNP电阻配备晶体管; •内置偏置电阻 •简化电路设计 •减少元件数量 •减少取放成本。 应用 •通用开关和放大 •逆变器和接口电路 •电路驱动。 |
