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RTF010P02 MOSFET P-Channel -20V 1mA 0.28ohm SOT-323 marking WQ low on-resistance ultra high-speed switch low drive voltage
| 最大源漏极电压Vds Drain-Source Voltage | -20V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 12V |
| 最大漏极电流Id Drain Current | -1A |
| 源漏极导通电阻Rds Drain-Source On-State Resistance | 0.28Ω @-1A,-4.5V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | -0.7--2.0V |
| 耗散功率Pd Power Dissipation | 800mW/0.8W |
| Description & Applications | Features Low on-resistance. (570mΩ at 2.5V) High power package. High speed switching. Low voltage drive. (2.5V) |
| 描述与应用 | 低导通电阻。 （570mΩ在2.5V） 高功率封装。 高速开关。 低电压驱动 |
