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RTL020P02 MOSFET P-Channel -20V -2A 250mohm SOT-363 marking WU low on-resistance high-speed switch low voltage drive
| 最大源漏极电压Vds Drain-Source Voltage | -20V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | -12V |
| 最大漏极电流Id Drain Current | -2A |
| 源漏极导通电阻Rds Drain-Source On-State Resistance | 250mΩ@ VGS = -2.5V, ID = -1A |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | -0.7~-2V |
| 耗散功率Pd Power Dissipation | 1W |
| Description & Applications | 2.5V Drive Pch MOS FET Features 1) Low on-resistance. 2) High power package. 3) High speed switching. 4) Low voltage drive. Applications DC-DC converter |
| 描述与应用 | 2.5V驱动P沟道MOS FET 特点 1）低导通电阻。 2）高功率封装。 3）高速开关。 4）低电压驱动。 应用 DC-DC转换 |
