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SI4334DV N-Channel MOSFET with Schottky Diode MARKING G34
| MOSFET TYPE | N-Channel MOSFET |
| MOS Drain-Source Voltage (Vds) | 30V |
|
Vgs(±) MOS Gate-Source Voltage |
±12V |
| MOS Drain Current （Id） | 14.8A |
|
Rds(on) MOS Drain-Source On-State Resistance |
VGS = 4.5 V, ID = 8 A RDS=0.0132~0.016Ω |
|
Vgs(th) MOS Gate-Source Threshold Voltage |
0.6~1.7v |
| DIODES TYPE | Schottky Diode |
| DIODE Reverse Voltage (Vr) | 30V |
| DIODE Average Rectified Current (Io) | 2A |
| DIODE Forward Voltage(Vf) | |
| Power Dissipation (Pd) | 5.2W |
| Description & Applications | N-Channel 30-V (D-S) MOSFET with Schottky Diode |
| Technical Documentation Download | Read Online |
