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SI5402BDC Complex FET 30V 6.7A 1206-8/vs-8 marking ADO

Model：SI5402BDC
Mark / screen / code / typing：ADO
Manufacturer：
Date Code：06+NOPB 06+ROHS
Package：1206-8/vs-8/SOT23-8
Standard Package：3000
Min Order：10

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Product description

最大源漏极电压Vds Drain-Source Voltage	30V
最大栅源极电压Vgs(±) Gate-Source Voltage	20V
最大漏极电流Id Drain Current	6.7A
源漏极导通电阻Rds Drain-Source On-State Resistance	35mΩ@ VGS =10V, ID =4.9A
开启电压Vgs（th） Gate-Source Threshold Voltage	1~3V
耗散功率Pd Power Dissipation	2.5W
Description & Applications	N-Channel, 30-V (D-S) MOSFET
描述与应用	30-V（D-S）的MOSFET N通道

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