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SI5402BDC Complex FET 30V 6.7A 1206-8/vs-8 marking ADO

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Product description
最大源漏极电压Vds
Drain-Source Voltage
30V
最大栅源极电压Vgs(±)
Gate-Source Voltage
20V
最大漏极电流Id
Drain Current
6.7A
源漏极导通电阻Rds
Drain-Source On-State Resistance
35mΩ@ VGS =10V, ID =4.9A
开启电压Vgs(th)
Gate-Source Threshold Voltage
1~3V
耗散功率Pd
Power Dissipation
2.5W
Description & ApplicationsN-Channel, 30-V (D-S) MOSFET
描述与应用30-V(D-S)的MOSFET N通道
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