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SI4953DY Complex FET -30V -4.9A SO8 marking 4953
最大源漏极电压Vds Drain-Source Voltage | -30V |
最大栅源极电压Vgs(±) Gate-Source Voltage | -20V |
最大漏极电流Id Drain Current | -4.9A |
源漏极导通电阻Rds Drain-Source On-State Resistance | 95mΩ@ VGS = -4.5V, ID = -3.6A |
开启电压Vgs(th) Gate-Source Threshold Voltage | -1V |
耗散功率Pd Power Dissipation | 2W |
Description & Applications | Dual P-Channel 30-V(D-S) MOSFET FEATURES 100% Rg Tested |
描述与应用 | 双P沟道30-V(D-S)的MOSFET 特点 100%的Rg测试 |