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SI4435ADY MOSFET P-Channel -30V -8A 15mohm SO8 marking 4435

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Product description
最大源漏极电压Vds
Drain-Source Voltage
-30V
最大栅源极电压Vgs(±)
Gate-Source Voltage
20V
最大漏极电流Id
Drain Current
-8A
源漏极导通电阻Rds
Drain-Source On-State
Resistance
15mΩ@ VGS = -10V, ID = -8A
开启电压Vgs(th)
Gate-Source Threshold Voltage
-1V~-3V
耗散功率Pd
Power Dissipation
2.5W
Description & ApplicationsP-Channel 30-V (D-S) MOSFET
描述与应用P沟道30-V(D-S)的MOSFET
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