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SI5475DC MOSFET P-Channel -12V -7.6A 27mohm 1206-8 marking 8FX power MOSFET low on-resistance portable equipment load switch
| 最大源漏极电压Vds Drain-Source Voltage | -12V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 8V |
| 最大漏极电流Id Drain Current | -7.6A |
| 源漏极导通电阻Rds Drain-Source On-State Resistance | 27mΩ@ VGS = -4.5V, ID = -5.5A |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | -0.45V |
| 耗散功率Pd Power Dissipation | 2.5W |
| Description & Applications | P-Channel 12-V (D-S) MOSFET TrenchFET 功率MOSFET |
| 描述与应用 | P沟道12-V（D-S）的MOSFET 特点 *TrenchFET 功率MOSFET *低导通电阻 应用 *用于便携式设备的电池和负载开关 |
