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SI5475DC MOSFET P-Channel -12V -7.6A 27mohm 1206-8 marking 8FTAC power MOSFET low on-resistance portable equipment load switch

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Product description
最大源漏极电压Vds
Drain-Source Voltage
-12V
最大栅源极电压Vgs(±)
Gate-Source Voltage
8V
最大漏极电流Id
Drain Current
-7.6A
源漏极导通电阻Rds
Drain-Source On-State
Resistance
27mΩ@ VGS = -4.5V, ID = -5.5A
开启电压Vgs(th)
Gate-Source Threshold Voltage
-0.45V
耗散功率Pd
Power Dissipation
2.5W
Description & ApplicationsP-Channel 12-V (D-S) MOSFET TrenchFET 功率MOSFET
描述与应用P沟道12-V(D-S)的MOSFET 特点 *TrenchFET 功率MOSFET *低导通电阻 应用 *用于便携式设备的电池和负载开关
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