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SI5504DC Complex FET 30V/-30V 2.9A/-2.1A 1206-8/vs-8 marking EA
最大源漏极电压Vds Drain-Source Voltage | 30V/-30V |
最大栅源极电压Vgs(±) Gate-Source Voltage | 20V/20V |
最大漏极电流Id Drain Current | 2.9A/-2.1A |
源漏极导通电阻Rds Drain-Source On-State Resistance | 143mΩ@ VGS =2.5V, ID =2.2A/290mΩ@ VGS =-4.5V, ID =-1.6A |
开启电压Vgs(th) Gate-Source Threshold Voltage | 1V/-1V |
耗散功率Pd Power Dissipation | 1.1W |
Description & Applications | Complementary 30-V (D-S) MOSFET |
描述与应用 | 互补的 30-V(D-S)的MOSFET |