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SI5513DC Complex FET 20V/-20V 3.1A/-2.1A 1206-8/vs-8 marking EB

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Product description
最大源漏极电压Vds
Drain-Source Voltage		20V/-20V
最大栅源极电压Vgs(±)
Gate-Source Voltage		12V/12V
最大漏极电流Id
Drain Current		3.1A/-2.1A
源漏极导通电阻Rds
Drain-Source On-State Resistance		134mΩ@ VGS =2.5V, ID =2.3A/260mΩ@ VGS =-2.5V, ID =-1.7A
开启电压Vgs（th）
Gate-Source Threshold Voltage		0.6~1.5V/-0.6~-1.5V
耗散功率Pd
Power Dissipation		1.1W
Description & ApplicationsComplementary 20-V (D-S) MOSFET
描述与应用互补的 20-V（D-S）的MOSFET
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