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SSM3K01F MOSFET N-Channel 30V 1.3A SOT-23/SC-59 marking kw low noise/highAGC-rating
最大源漏极电压Vds Drain-Source Voltage | 30V |
最大栅源极电压Vgs(±) Gate-Source Voltage | 10V |
最大漏极电流Id Drain Current | 1.3A |
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 0.12Ω/Ohm,650mA,4V |
开启电压Vgs(th) Gate-Source Threshold Voltage | 0.6-1.1V |
耗散功率Pd Power Dissipation | 200mW/0.2W |
Description & Applications | TOSHIBA Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications High Speed Switching Applications • Small package • Low on resistance : Ron = 120 mΩ (max) (VGS = 4 V) : Ron = 150 mΩ (max) (VGS = 2.5 V) • Low gate threshold voltage: Vth = 0.6~1.1 V (VDS = 3 V, ID = 0.1 mA) |
描述与应用 | 东芝场效应晶体管的硅N沟道MOS类型 高速开关应用 高速开关应用 •小型封装 •低导通电阻RON =120MΩ(最大(VGS=4 V) 罗恩=150MΩ(最大)VGS=2.5 V) •低栅极阈值电压VTH =0.6〜1.1 V(VDS= 3 V,ID= 0.1毫安) |