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TP0101T-T1 MOSFET P-Channel -20V -600mA 0.45ohm SOT-23 marking PO high-speed switch low on-resistance

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Product description
最大源漏极电压Vds
Drain-Source Voltage
-20V
最大栅源极电压Vgs(±)
Gate-Source Voltage
8V
最大漏极电流Id
Drain Current
-600mA/-0.6A
源漏极导通电阻Rds
Drain-Source On-State
Resistance
0.45Ω @-600mA,-4.5V
开启电压Vgs(th)
Gate-Source Threshold Voltage
-0.5--1.5V
耗散功率Pd
Power Dissipation
350mW/0.35W
Description & ApplicationsHigh-Side Switching Low On-Resistance: 0.45 Low Threshold: 0.9 V (typ) Fast Switching Speed: 32 ns 2.5-V or Lower Operation
描述与应用高边开关 低导通电阻:0.45 低门槛:0.9 V(典型值) 开关速度快:32纳秒 2.5 V或更低的操作
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