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TP0101T-T1 MOSFET P-Channel -20V -600mA 0.45ohm SOT-23 marking PO high-speed switch low on-resistance
| 最大源漏极电压Vds Drain-Source Voltage | -20V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 8V |
| 最大漏极电流Id Drain Current | -600mA/-0.6A |
| 源漏极导通电阻Rds Drain-Source On-State Resistance | 0.45Ω @-600mA,-4.5V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | -0.5--1.5V |
| 耗散功率Pd Power Dissipation | 350mW/0.35W |
| Description & Applications | High-Side Switching Low On-Resistance: 0.45 Low Threshold: 0.9 V (typ) Fast Switching Speed: 32 ns 2.5-V or Lower Operation |
| 描述与应用 | 高边开关 低导通电阻：0.45 低门槛：0.9 V（典型值） 开关速度快：32纳秒 2.5 V或更低的操作 |
