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TP0610K MOSFET P-Channel -60V -185mA 6ohm SOT-23 marking 6K high-speed switch low on-resistance G-S ESD protection
最大源漏极电压Vds Drain-Source Voltage | -60V |
最大栅源极电压Vgs(±) Gate-Source Voltage | 20V |
最大漏极电流Id Drain Current | -185mA/-0.185A |
源漏极导通电阻Rds Drain-Source On-State Resistance | 6Ω @-500mA,-10V |
开启电压Vgs(th) Gate-Source Threshold Voltage | -1--3.0V |
耗散功率Pd Power Dissipation | 350mW/0.35W |
Description & Applications | High-Side Switching Low On-Resistance: 6 Ω Low Threshold: –2 V (typ) Fast Swtiching Speed: 20 ns (typ) Low Input Capacitance: 20 pF (typ) Gate-Source ESD Protection |
描述与应用 | 高边开关 低导通电阻:6Ω 低阈值:-2 V(典型值) 快速Swtiching的速度:20 n(典型值) 低输入电容20 PF(典型值) 门源ESD保护 |