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UPA507TE P-CHANNEL MOS FET WITH SCHOTTKY BARRIER DIODE SOT153 marking za
| MOSFET TYPE | P-CHANNEL MOS FET |
| MOS Drain-Source Voltage (Vds) | -20V |
|
Vgs(±) MOS Gate-Source Voltage |
±8V |
| MOS Drain Current （Id） | -2.0A |
|
Rds(on) MOS Drain-Source On-State Resistance |
RDS(on)1 = 68 mΩ TYP. (VGS = −4.5 V, ID = −1.0 A)
RDS(on)2 = 84 mΩ TYP. (VGS = −2.5 V, ID = −1.0 A)
RDS(on)3 = 109 mΩ TYP. (VGS = −1.8 V, ID = −1.0 A)
|
|
Vgs(th) MOS Gate-Source Threshold Voltage |
|
| DIODES TYPE | SCHOTTKY BARRIER DIODE
|
| DIODE Reverse Voltage (Vr) | 30V |
| DIODE Average Rectified Current (Io) | 1A |
| DIODE Forward Voltage(Vf) | 0.38V |
| Power Dissipation (Pd) | |
| Description & Applications | P-CHANNEL MOS FET WITH SCHOTTKY BARRIER DIODE
FOR SWITCHING
• 1.8 V drive available (MOS FET)
• Low on-state resistance (MOS FET)
• Low forward voltage (Schottky barrier diode)
|
| Technical Documentation Download | Read Online |
