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UPA602T Complex FET 50V 100mA/0.1A SOT-163/SOT23-6 marking IA
| 最大源漏极电压Vds Drain-Source Voltage | 50V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 20V |
| 最大漏极电流Id Drain Current | 100mA/0.1A |
| 源漏极导通电阻Rds Drain-Source On-State Resistance | 2500mΩ@ VGS = 10V, ID = 10mA |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 0.8~1.8V |
| 耗散功率Pd Power Dissipation | 300mW/0.3W |
| Description & Applications | N-CHANNEL MOS FET (6-PIN 2 CIRCUITS) The uPA602T is a mini-mold device provided with two MOS FET circuits. It achieves high-density mounting and saves mounting costs. FEATURES • Two MOS FET circuits in package the same size as SC-59 • Complement to uPA603T • Automatic mounting supported |
| 描述与应用 | N沟道MOS FET（6-PIN2电路） 的uPA602T是一个小型的模具装置，设置有两个 MOS FET电路。它实现了高密度安装， 节省了安装成本。 特点 •两个MOS FET的电路包的大小相同 SC-59 •补充uPA603T的 •支持自动安装 |
