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UPA606T DUAL N-CHANNEL MOSFET 60V 0.1A SOT163 MARKING ma

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Product description
Drain-Source Voltage (Vds)  50V

Vgs(±)

Gate-Source Voltage

 ±20V
Drain Current  (Id)  100MA/0.1A

Rds(on)

Drain-Source On-State Resistance

 VGS = 4.0 V, ID = 10 mA RDS=19~30Ω
VGS = 10 V, ID = 10 mA RDS=15~25Ω

Vgs(th)

Gate-Source Threshold Voltage

 
Power Dissipation  (Pd)  0.3W
Description & Applications  N-CHANNEL MOS FET (6-PIN 2 CIRCUITS)
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