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XP04213002HT NPN+NPN Complex Bipolar Transistor 50V 100mA R1=R2=47KΩ HEF=80 SOT-363/SC-88 marking 8S switch and digital circuit application
|
V(BR) CBO Collector-Base Voltage |
50V |
|
V(BR) CEO Collector-Emitter Voltage |
50V |
| Collector Current(IC) | 100MA |
| Input Resistance(R1) | 47KΩ |
| Base-Emitter Resistance(R2) | 47KΩ |
| Base-Emitter Input Resistance Ratio (R1/R2) | 1 |
| DC Current Gain(hFE) | 80 |
| Transtion Frequency(fT) | 150MHZ |
| Power Dissipation （Pd） | 150MW |
| Description & Applications | Silicon NPN epitaxial planar type
For switching/digital circuits
UNR2213 (UN2213) × 2
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| Technical Documentation Download | Read Online |
