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XP611FH PNP+PNP Complex Bipolar Digital Transistor -50V -100mA 30 150mW/0.15W SOT-363/SC-88/SC70-6 marking 4S switching inverting interface driver circuit
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V(BR) CBO Collector-Base Voltage |
TR1/TR2=-50V / -50V |
|
V(BR) CEO Collector-Emitter Voltage |
TR1/TR2=-50V / -50V |
| Collector Current(IC) | TR1/TR2=-100MA / -100MA |
| Input Resistance(R1) | TR1/TR2= 4.7KΩ / 2.2KΩ |
| Base-Emitter Resistance(R2) | TR1/TR2=10KΩ / 10KΩ |
| Base-Emitter Input Resistance Ratio (R1/R2) | TR1/TR2=0.47 / 0.22 |
| DC Current Gain(hFE) | TR1/TR2=30 / 30 |
| Transtion Frequency(fT) | TR1/TR2=80MHZ / 80MHZ |
| Power Dissipation （Pd） | 150MW |
| Description & Applications | Silicon PNP epitaxial planer transistor
For switching/digital circuits
■ Features
● Two elements incorporated into one package.
(Transistors with built-in resistor)
● Reduction of the mounting area and assembly cost by one half.
■ Basic Part Number of Element
● UN111F+UN111H
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| Technical Documentation Download | Read Online |
