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ZVNL110GTA MOSFET N-Channel 100V 600mA/0.6A SOT-223/SC-73/TO261-4 marking ZVNL110 fast switch/low on-resistance

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Product description
最大源漏极电压Vds Drain-Source Voltage100V
最大栅源极电压Vgs(±) Gate-Source Voltage12V
最大漏极电流Id Drain Current600mA/0.6A
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance3.0Ω/Ohm @500mA,10V
开启电压Vgs(th) Gate-Source Threshold Voltage0.75-1.5V
耗散功率Pd Power Dissipation2W
Description & ApplicationsN-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET FEATURES LOW RDS(ON) - 3Ω PARTMARKING DETAIL - ZVNL110
描述与应用N沟道增强 模式垂直DMOS FET 低RDS(ON) - 3Ω PARTMARKING详细信息 ZVNL110“
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