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ZVNL110GTA MOSFET N-Channel 100V 600mA/0.6A SOT-223/SC-73/TO261-4 marking ZVNL110 fast switch/low on-resistance
最大源漏极电压Vds Drain-Source Voltage | 100V |
最大栅源极电压Vgs(±) Gate-Source Voltage | 12V |
最大漏极电流Id Drain Current | 600mA/0.6A |
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 3.0Ω/Ohm @500mA,10V |
开启电压Vgs(th) Gate-Source Threshold Voltage | 0.75-1.5V |
耗散功率Pd Power Dissipation | 2W |
Description & Applications | N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET FEATURES LOW RDS(ON) - 3Ω PARTMARKING DETAIL - ZVNL110 |
描述与应用 | N沟道增强 模式垂直DMOS FET 低RDS(ON) - 3Ω PARTMARKING详细信息 ZVNL110“ |