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EML17 PNP+SBD Complex Bipolar Transistor R1=R2=47KΩ SOT-553/EMT5 marking L17 switch and digital circuit application

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Product description
BJT  TYPE  PNP  DTA144E
BJT V(BR)CBO Collector-Base Voltage(VCBO)  -50V
BJT Collector-Emitter Voltage(VCEO)  -50V
BJT  Collector Current(IC)  -30MA
BJT Transtion Frequency(fT)  250MHZ
BJT  DC Current Gain(hFE)  
BJT VCE(sat) Collector-Emitter Saturation Voltage  
DIODE TYPE  SBD RB520G-30
DIODE VR Reverse Voltage  30V
DIODE Io Rectified Current  0.1A
DIODE  Forward Voltage(Vf)  0.45V
Pc Power Dissipation  0.15W
Description & Applications  General purpose transistor 
(isolated transistor and diode) 
 
DTA144E and a RB520G-30 are housed independently in a EMT package.
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