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2SK3342 P-CHANNEL MOS FET 250V 4.5A TO252 代码 K3342 Enhancement mode Switching Regulator and DC-DC Converter Low drain-source ON resistance
| 最大源漏极电压Vds Drain-Source Voltage |
250V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage |
±20V |
| 最大漏极电流Id Drain Current |
4.5A |
| 源漏极导通电阻Rds Drain-Source On-State Resistance |
0.8Ω~1.0Ω (VGS = 10 V, ID = 2.5 A) |
| 开启电压Vgs（th） Gate-Source Threshold Voltage |
Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1 mA) |
| 耗散功率Pd Power Dissipation |
20W |
| Description & Applications | TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π−MOSIII). Switching Regulator and DC-DC Converter Applications. Motor Drive Applications. *Low drain-source ON resistance : RDS (ON) = 0.8 Ω (typ.). * High forward transfer admittance : |Yfs| = 4.5 S (typ.). * Low leakage current : IDSS = 100 μA (max) (VDS = 250 V). * Enhancement mode : Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1 mA). |
| 描述与应用 | 东芝场效应晶体管的硅N沟道MOS型（π-MOSIII）。 开关稳压器和DC-DC转换器应用。 电机驱动应用。 *低漏源导通电阻RDS（ON）= 0.8Ω（典型值）。 *较强的正向转移导纳：YFS|=4.5 S（典型值）。 *低漏电流：IDSS= 100μA（最大值）（VDS=250 V）。 *增强模式：VTH =1.5〜3.5 V（VDS=10V，ID= 1毫安）。 |
