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2SA1412-Z PNP transistors(BJT) -400V -2A 40MHz 40~120 -250mV/-0.25V TO-252/DPAK marking A1412

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Product description
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
-400V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
-400V
集电极连续输出电流IC
Collector Current(IC)
-2A
截止频率fT
Transtion Frequency(fT)
40MHz
直流电流增益hFE
DC Current Gain(hFE)
40~120
管压降VCE(sat)
Collector-Emitter SaturationVoltage
-250mV/-0.25V
耗散功率Pc
PoWer Dissipation
2W
Description & ApplicationsPNP silicon triple diffused transistor high voltage; high speed; complement to 2SC3631-Z
描述与应用PNP硅三重扩散晶体管 高电压; 高速; 补充2SC3631-Z
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