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2SA1808 PNP transistors(BJT) -30V -30mA 400MHz 82~180 -100mV/-0.1V SOT-323/UMT3 marking BDP
集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | -30V |
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | −20V |
集电极连续输出电流IC Collector Current(IC) | -30mA |
截止频率fT Transtion Frequency(fT) | 400MHz |
直流电流增益hFE DC Current Gain(hFE) | 82~180 |
管压降VCE(sat) Collector-Emitter SaturationVoltage | -100mV/-0.1V |
耗散功率Pc PoWer Dissipation | 150mW/0.15W |
Description & Applications | Features high gain bandwidth product; low output capacitance |
描述与应用 | 特点 高增益带宽积; 低输出电容 |