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2SB1115 PNP transistors（BJT） -60V -1A 120MHz 200~400 -300mV/-0.3V SOT-89/SC-62 marking YL radio power amplifier/switch
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | -60V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | −50V |
| 集电极连续输出电流IC Collector Current(IC) | -1A |
| 截止频率fT Transtion Frequency(fT) | 120MHz |
| 直流电流增益hFE DC Current Gain(hFE) | 200~400 |
| 管压降VCE（sat） Collector-Emitter SaturationVoltage | -300mV/-0.3V |
| 耗散功率Pc PoWer Dissipation | 2W |
| Description & Applications | PNP Silicon epitaxial planar transistor Applications Audio frequency power amplifier and switching application Features World standard miniature package High DC current gain Low VCE Complement to 2SD1615 |
| 描述与应用 | PNP硅外延平面晶体管 应用 音频功率放大器和开关应用 特点 世界标准的微型封装 高直流电流增益 低VCE 补充2SD1615 |
